features ul recognition file number e320098 small volume, light weight typical ir less than 2.0 a typical applications general purpose use in ac/dc bridge full wave epoxy meets ul 94 vo flammability rating primary characterristics i f(av) weight:6.5g(0.23ozs) 30a v rrm 400v to 1200v 1.10v 5 a 150oc i fsm i r v f semiconductor rohs rohs page 1 of 3 glass passivated single-phase bridge rectifier, 30a nell high power products compliant to rohs high surge current capability low thermal resistance small thermal resistance rectification for big power supply, field supply for dc moto r, industrial automation applications. advantage t j max. 400a GBJ30 GBJ3004 thru GBJ3012 isolation voltage up to 2500v international standard package high heatconduction rate low temperature rise all dimensions in millimeters www.nellsemi.com + ~ ~ 300.3 3.20.2 200.3 17.50.2 50.2 40.2 100.2 7.50.2 7.50.2 0.50.1 0.50.1 605 2.50.2 2.20.2 10.1 3.60.1 11.20.2 4.60.1 2.70.1 0.650.05 + ~ ~ high temperature soldering guaranteed : 260c/10 second, 2 .3kg tension force
semiconductor rohs rohs page 2 of 3 nell high power products major ratings and characteristics (t = 25c unless otherwis e noted) a parameter vv symbol GBJ30 unit 1300 04 500 700 900 1200 400 600 800 1000 12 08 06 10 1100 1200 400 600 800 1000 v maximum repetitive peak reverse voltage peak reverse non-repetitive voltage maximum dc blocking voltage maximum average forward rectified output current, t = 85 c c peak forward surge current single sine-wave superimposed on rated load rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing rms isolation voltage from case to leads operating junction storage temperature range v rrm v rsm i fsm v dc i f(av) v iso i t 2 2500 664 30 -40 to 150 400 a s 2 aa v oc electrical characteristics (t = 25c unless otherwise note d) a parameter v a symbol GBJ30 unit 04 12 08 06 10 maximum instantaneous forward drop per diode maximum reverse dc current at rated dc blocking v f i r 500 1.10 5 voltage per diod test conditions i f = 15a t a = 25 c t a = 150 c thermal and mechanicac (t = 25c unless otherwise noted) a parameter c/w symbol GBJ30 unit 04 12 08 06 10 typical thermal resistance (1) with heatsink, single side heat dissipation, half sine wave. r jc (1) 1.0 notes storage temperature range t stg -40 to 150 oc t j test conditions junction to case single-side heat dissipation, sine half wave mounting 10 % to heatsink m3 a mounting compound is recommended and the torque should be rechecked after a for the spread period of hours to allow 3 . of the compound 0.8 nm approximate weight 6.5 torque g - product type : gbj package,1 bridge ? 1 2 3 - device code 30 10 3 gbj - 100 = voltage code : code x v rrm i rating : for a f(av) "30" 30 GBJ30 www.nellsemi.com
semiconductor rohs rohs nell high power products GBJ30 fig.1 derating curve for output rectified current averageforwardoutputcurrent,amperes(a) ambienttemperature(c) 30 20 50 10 40 0 0 50 100 150 fig.2 maximum non-repetitive peak forward surge current per bridge element averageoutputcurrent,amperes(a) 0 100 200 300 400 1 10 100 numberofcycleat50h z t =25c j t =100c j fig.3 typical reverse characteristics per bridge element instantaneousreverseoutputmicro,amperes( a) percentofratedpeakreversevoltage(%) 100 10 1.0 0.1 0.01 0 20 40 60 80 100 120 140 fig.4 typical forward characteristics per bridge element 100 10 1.0 0.1 0.5 0.7 0.9 1.1 1.3 instantaneousforwardcurrent,amperes(a) forwardvoltage(v) page 3 of 3 www.nellsemi.com t =25c j t =25c j singlehalfsinewave (jedecmethod)
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